Low-Power Fully Integrated CMOS DTV Tuner Front-End for ATSC Terrestrial Broadcasting

Low-Power Fully Integrated CMOS DTV Tuner Front-End for ATSC Terrestrial Broadcasting

A low-cost low-power DTV tuner for current digital television application is described. In order to increase integration level and reduce power consumption for off-air DTV tuner application, an SAW-filterless tuner front-end architecture is adopted. As a part of the concept, key building blocks for this architecture are implemented on a main stream 0.35 μm CMOS technology. Experimental measurem...

RF front - end design for terrestrial and mobile digital television systems ( May 2007 )

CMOS RF front-end design for terrestrial and mobile digital television systems (May 2007) Jianhong Xiao Chair of Advisory Committee: Jose Silva-Martinez With the increasing demand for high quality TV service, digital television (DTV) is replacing the conventional analog television. DTV tuner is one of the most critical blocks of the DTV receiver system; it down-converts the desired DTV RF chann...

Ultra-Low Power Fully Integrated Wireless Front-End Biosensor For Patient Tracking And Data-Logging

A low-cost, unobtrusive system of collecting and reporting real-time vital signs is often necessary in effectively managing many chronic diseases, such as diabetes. Furthermore, a major crisis in healthcare is the soaring cost of collecting and managing patient data. A reduction in the cost of continuous non-emergency patient monitoring, where patients who are not in need of direct medical atte...

Fully Integrated CMOS Power Amplifier

Chopper Stabilized, Low-Power, Low-Noise, Front End Interface Circuit for Capacitive CMOS MEMS Sensor Applications

In this paper, a chopper stabilized fully differential CMOS pre-amplifier circuit is presented. The proposed circuit is designed for sub-atto Farad capacitive CMOS MEMS sensing applications. Chopper stabilization technique is employed to minimize flicker (1/f) noise and offsets in the circuit. The proposed circuit is designed using MIMOS 0.35 μm AMS CMOS 3.3 V technology and simulation results ...